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Titel
X-ray Diffraction vs. Photoluminescence of Semiconductor -Nanostructures / submitted by Dorian Ziss
AutorInnenZiss, Dorian
Beurteiler / BeurteilerinStangl, Julian
ErschienenLinz, 2017
Umfang103 Blätter : Illustrationen
HochschulschriftUniversität Linz, Masterarbeit, 2017
SpracheEnglisch
DokumenttypMasterarbeit
Schlagwörter (GND)Halbleiter / Nanostruktur / Röntgenbeugung / Photolumineszenzspektroskopie
URNurn:nbn:at:at-ubl:1-19294 Persistent Identifier (URN)
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 Das Werk ist gemäß den "Hinweisen für BenützerInnen" verfügbar
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X-ray Diffraction vs. Photoluminescence of Semiconductor -Nanostructures [7.54 mb]
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Zusammenfassung (Englisch)

In thesis we have investigated InGaAs quantum-dots (QDs) embedded in a GaAs membrane, using x-ray diffraction photoluminescence measurements. The QDs can be used as single photon-sources but one problem is that they have, to some extent, “statistically” deviating properties after growth, resulting in “atom-like” energy levels which differ slightly from dot to dot. Hence, to overcome this problem, one can tune the emission properties using strain as a “tuning knob” for the energy levels. To get active and reproducible control on the strain state, the GaAs membrane is bonded onto a piezoelectric substrate. This configuration allows reversibly inducing strain by applying a voltage to the piezoelectric substrate, with the GaAs membrane on top following the deformation of the piezo actuator. The first aim of this work is to investigate how the strain is transferred from the piezo via different bonding layers to the GaAs and hence to the QDs. A second aim is to provide a reliable set of material parameters (optical deformation potentials) linking the mechanical and optical properties. This is done by comparing the strain in induced in the GaAs membrane, measured by X-ray diffraction, to the calculated strain form the changes of the optical emissions and optimizing the deformation potentials to reduce the differences between calculated and measured strain values.

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