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Magneto Transport of III nitride Systems / submitted by Markus Aiglinger, BSc
AuthorAiglinger, Markus
CensorBonanni, Alberta ; Böhm, Helga
Thesis advisorBonanni, Alberta
PublishedLinz, 2018
Descriptioniv, 78 Seiten : Illustrationen
Institutional NoteUniversität Linz, Masterarbeit, 2018
Document typeMaster Thesis
Keywords (DE)III Nitride / GaN / InGaN / Magnetotransport / Spin-Bahn Kopplung / Hall Messung / Ferromagnetismus / Nanokristalle
Keywords (EN)III nitride / GaN / InGaN / magneto transport / Spin-orbit coupling / hall measurement / ferro magnetism / nanocrystalls
Keywords (GND)Nitride / Magnetowiderstand / Spin-Bahn-Wechselwirkung / Ferromagnetismus / Nanokristall
URNurn:nbn:at:at-ubl:1-22570 Persistent Identifier (URN)
 The work is publicly available
Magneto Transport of III nitride Systems [3.84 mb]
Abstract (English)

In this work, we study the magneto transport properties of two III nitride systems which are expected to be the work-bench for relevant spin dependent phenomena. These two systems are GaN with embedded GaxFe4xN nanocrystals (GaN-NC) and degenerated InxGax1N:Si. Both systems are fabricated by metal organic vapour phase epitaxy. The magneto transport measurements are performed at temperatures down to 1.59 K and magnetic fields of up to 6.9 T. For the GaN-NC system a clear influence of the nanocrystals on the transport properties is observed. However, the measurements do not show a clear evidence for spin polarisation effects. The magneto transport measurements for the InxGax1N:Si system shows the onset of weak anti localisation, which indicates InxGax1N:Si to be a Rashba semiconductor. In order to quantify the Rashba coupling parameter the crystalline quality in the InxGax1N:Si layer needs to be improved, aiming to increase the carrier mean free path.

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