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Title
Surface pretreated low-temperature aluminumaluminum wafer bonding
AuthorHinterreiter, Andreas P. ; Rebhan, Bernhard ; Flötgen, Christoph ; Dragoi, Viorel ; Hingerl, Kurt
Published in
Microsystem Technologies, 2018, Vol. 24, Issue 1, page 773-777
PublishedSpringer Berlin Heidelberg, 2018
LanguageEnglish
Document typeJournal Article
ISSN1432-1858
URNurn:nbn:at:at-ubl:3-1649 Persistent Identifier (URN)
DOI10.1007/s00542-017-3520-8 
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 The work is publicly available
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Surface pretreated low-temperature aluminumaluminum wafer bonding [1.97 mb]
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Abstract (English)

Aluminumaluminum wafer bonding is becoming increasingly important in the production of CMOS microelectromechanical systems. So far, successful bonding has required extreme processing temperatures of 450 C or more, because the chemically highly stable oxide layer acts as a diffusion barrier between the two aluminum metallization layers. By using the ComBond® system, in which a surface treatment and subsequent wafer bonding are both performed in a high vacuum cluster, for the first time successful AlAl wafer bonding was possible at a temperature of 150 C. The bonded interfaces were characterized using C-mode scanning acoustic microscopy and transmission electron microscopy, and featured areas of oxide-free, atomic contact.

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