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Title
Tuning the Size, Shape and Density of ′-GayFe4yN Nanocrystals Embedded in GaN
AuthorNavarro-Quezada, Andrea ; Devillers, Thibaut ; Li, Tian ; Bonanni, Alberta
Published in
Crystals, 2019, Vol. 9, Issue 1, page 50
PublishedMDPI, 2019
LanguageEnglish
Document typeJournal Article
Keywords (EN)magnetic nanocrystals / Metal-organic vapor phase epitaxy / III-nitrides
Project-/ReportnumberP22477
Project-/ReportnumberP24471
Project-/ReportnumberP26830
Project-/ReportnumberV478
Project-/Reportnumber227690
ISSN2073-4352
URNurn:nbn:at:at-ubl:3-1566 Persistent Identifier (URN)
DOI10.3390/cryst9010050 
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 The work is publicly available
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Tuning the Size, Shape and Density of ′-GayFe4yN Nanocrystals Embedded in GaN [1.72 mb]
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Abstract (English)

Phase-separated semiconductor systems hosting magnetic nanocrystal (NCs) are attracting increasing attention, due to their potential as spintronic elements for the next generation of devices. Owing to their morphology- and stoichiometry-dependent magnetic response, self-assembled -GayFe4yN NCs embedded in a Fe -doped GaN matrix, are particularly versatile. It is studied and reported here, how the tuning of relevant growth parameters during the metalorganic vapour phase epitaxy process affects the crystalline arrangement, size, and shape of these self-assembled nanostructures. In particular, it is found that the Ga-flow provided during the -doping, determines the amount of Fe incorporated into the layers and the spatial density of the NCs. Moreover, the in-plane dimensions of the NCs can also be controlled via the Ga-flow, conditioning the aspect-ratio of the embedded nanostructures. These findings are pivotal for the design of nanocrystal arrays with on-demand size and shape, essential requirements for the implementation into functional devices.

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CC-BY-License (4.0)Creative Commons Attribution 4.0 International License